Semiconductor device including an IGBT

ABSTRACT

A semiconductor device includes a semiconductor substrate and a MOS transistor. The semiconductor substrate has the first main surface and the second main surface facing each other. The MOS transistor includes a gate electrode ( 5   a ) formed on the first main surface side, an emitter electrode ( 11 ) formed on the first main surface side, and a collector electrode ( 12 ) formed in contact with the second main surface. An element generates an electric field in a channel by a voltage applied to the gate electrode ( 5   a ), and controls the current between the emitter electrode ( 11 ) and the collector electrode ( 12 ) by the electric field in the channel. The spike density in the interface between the semiconductor substrate and the collector electrode ( 12 ) is not less than 0 and not more than 3×10 8  unit/cm 2 . Consequently, a semiconductor device suitable for parallel operation is provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of co-pending parent U.S. application Ser. No. 12/867,832 filed on Aug. 16, 2010, which is based on PCT/JP2008/056306filed on Mar. 31, 2008, the entire contents of each of which are incorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a semiconductor device, and particularly to a semiconductor device having an IGBT (Insulated Gate Bipolar Transistor) which is a high withstand voltage semiconductor device.

BACKGROUND ART

In the field of the high withstand voltage semiconductor device (power device) which controls the voltage exceeding several hundreds volts, since a large current is also applied, there is a need to provide element characteristics which suppress heat generation, that is, loss. Furthermore, it is desirable to implement a voltage drive element having a relatively small-sized drive circuit suffering little loss as a driving scheme of the gate controlling the voltage and current.

In recent years, for the reasons as described above, an insulated gate bipolar transistor, that is, an IGBT, has been mainly employed in this field as an element that allows voltage driving with little loss. This IGBT is configured so as to allow a decreased impurity concentration of the drain of a MOS (Metal Oxide Semiconductor) transistor for keeping the withstand voltage low and to set a diode to be on the drain side for decreasing the drain resistance.

Since the diode exhibits a bipolar behavior in the IGBT as described above, the source side and the drain side of the MOS transistor in the IGBT are referred to as an emitter side and a collector side, respectively, in the present application.

The IGBT serving as a voltage drive element is generally applied with a voltage of several hundreds volts between its collector and emitter, and the applied voltage is controlled by a gate voltage of ±several volts to several tens of volts. Furthermore, the IGBT is often used as an inverter, in which case the voltage between the collector and the emitter is low but a large current flows when the gate is turned on, and no current flows but the voltage between the collector and the emitter is high when the gate is turned off.

The IGBT is usually operated in the above-described mode. Thus, loss may include a steady loss which is the product of the current and the voltage in the ON state, and a switching loss during the period of transition between the ON state and the OFF state. The product of the leakage current and the voltage in the OFF state is considerably small, so that it can be negligible.

On the other hand, it is also important to prevent destruction of the element even under the abnormal conditions, for example, in the case where the load shorts out. In this case, the gate is turned on to cause a large current to flow while a power supply voltage of several hundreds volts is applied between the collector and the emitter.

In the IGBT configured to have a MOS transistor and a diode connected in series, the maximum current is limited by the saturation current of the MOS transistor. Accordingly, the current limitation occurs also in the case where a short circuit occurs as described above, which allows prevention of element destruction resulting from heat generation for a certain period of time.

The structure of the conventional IGBT is disclosed, for example, in Japanese Patent Laying-Open No. 2004-247593 (Patent Document 1). The IGBT in Patent Document 1 mainly includes a gate electrode, a source (emitter) electrode, a drain (collector) electrode, and an n-type substrate. A trench is formed on the upper surface of the n-type substrate, and the gate electrode is buried in this trench. A p-type base layer is formed on the upper portion in the n-type substrate, and an n⁺ type source layer and a p⁺ type drain layer are formed within the p-type base layer. The n⁺ type source layer and the p⁺ type drain layer are adjacent to each other on the surface of the n-type substrate. The gate electrode faces the n⁺ type source layer and the p-type base layer across the gate insulating film within the n-type substrate. The emitter electrode is in electrical contact with the n⁺ type source layer and the p⁺ type drain layer. The p⁺ type drain layer is formed on the underside of the n-type substrate, and the collector electrode is in contact with the p⁺ type drain layer on the underside of the n-type substrate. An n⁻ type epitaxial layer and an n-type buffer layer are buried between the p⁺ type drain layer and the p-type base layer within the n-type substrate. The n⁻ type epitaxial layer is in contact with the p-type base layer and the n-type buffer layer, and the n-type buffer layer is in contact with the p⁺ type drain layer.

Furthermore, the IGBT having the same configuration as that in Patent Document 1 is disclosed, for example, in Japanese Patent Laying-Open No. 2006-49933 (Patent Document 2), Japanese Patent Laying-Open No. 2002-359373 (Patent Document 3), Japanese Patent Laying-Open No. 09-260662 (Patent Document 4), U.S. Pat. No. 6,815,767 (Patent Document 5), U.S. Pat. No. 6,953,968 (Patent Document 6), and U.S. Pat. No. 6,781,199 (Patent Document 7).

-   Patent Document 1: Japanese Patent Laying-Open No. 2004-247593 -   Patent Document 2: Japanese Patent Laying-Open No. 2006-049933 -   Patent Document 3: Japanese Patent Laying-Open No. 2002-359373 -   Patent Document 4: Japanese Patent Laying-Open No. 09-260662 -   Patent Document 5: U.S. Pat. No. 6,815,767 -   Patent Document 6: U.S. Pat. No. 6,953,968 -   Patent Document 7: U.S. Pat. No. 6,781,199

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

In the power device, a plurality of IGBT and diode chips are provided in one package module, in which the plurality of IGBTs are connected in parallel to each other. The temperature dependency of an ON voltage V_(CE)(sat) is important as characteristics of the IGBT used for the power device. ON voltage V_(CE)(sat) described herein represents a voltage between the collector and the emitter that is required to obtain an arbitrary rated current (density) J_(C). It is suitable for operating the plurality of IGBTs connected in parallel to each other (in other words, operating the IGBTs in parallel) that ON voltage V_(CE)(sat) exhibits positive temperature dependency, that is, ON voltage V_(CE)(sat) increases in accordance with an increase in temperature of the IGBT. In the case where ON voltage V_(CE)(sat) exhibits negative temperature dependency, the current flows concentratedly into the IGBT having a low ON voltage V_(CE)(sat) when the IGBTs are operated in parallel. As a result, the package module is likely to malfunction, which may tend to cause problems such as destruction.

Therefore, an object of the present invention is to provide a semiconductor device suitable for parallel operation.

Means for Solving the Problems

A semiconductor device according to one aspect of the present invention includes a semiconductor substrate and an element. The semiconductor substrate has a first main surface and a second main surface facing each other. The element has a gate electrode formed on a side of the first main surface, a first electrode formed on the side of the first main surface and a second electrode formed in contact with the second main surface. The element generates an electric field in a channel by a voltage applied to the gate electrode, and controls a current between the first electrode and the second electrode by the electric field in the channel. A spike density in an interface between the semiconductor substrate and the second electrode is not less than 0 and not more than 3×10⁸ unit/cm².

A semiconductor device according to another aspect of the present invention includes a semiconductor substrate and an element. The semiconductor substrate has a first main surface and a second main surface facing each other. The element has a gate electrode formed on a side of the first main surface, a first electrode formed on the side of the first main surface, and a second electrode formed in contact with the second main surface. The element generates an electric field in a channel by a voltage applied to the gate electrode, and controls a current between the first electrode and the second electrode by the electric field in the channel. The semiconductor device further includes a collector region formed on the second main surface. The collector region includes a collector diffusion layer of a first conductivity type in contact with the second electrode, a buffer diffusion layer of a second conductivity type formed closer to the first main surface than the collector diffusion layer is, and a drift diffusion layer of the second conductivity type. The drift diffusion layer is lower in impurity concentration than the buffer diffusion layer, and is formed adjacent to the buffer diffusion layer and closer to the first main surface than the buffer diffusion layer is. A ratio of the number of atoms per unit area of impurities forming the buffer diffusion layer to the number of atoms per unit area of impurities forming the drift diffusion layer is not less than 0.05 and not more than 100.

Effects of the Invention

According to the present invention, a semiconductor device suitable for parallel operation can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross sectional view showing the configuration of a semiconductor device according to the first embodiment of the present invention.

FIG. 2 is a schematic cross sectional view showing the first process of a method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a schematic cross sectional view showing the second process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a schematic cross sectional view showing the third process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 5 is a schematic cross sectional view showing the fourth process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 6 is a schematic cross sectional view showing the fifth process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 7 is a schematic cross sectional view showing the sixth process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 8 is a schematic cross sectional view showing the seventh process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 9 is a schematic cross sectional view showing the eighth process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 10 is a schematic cross sectional view showing the ninth process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 11 is a schematic cross sectional view showing the tenth process of the method for manufacturing the semiconductor device according to the first embodiment of the present invention.

FIG. 12 is a cross sectional view schematically showing the state of the interface between a p-type collector region and a collector electrode in which spikes are formed.

FIG. 13 is a plan view schematically showing the state of the interface between the p-type collector region and the collector electrode in which spikes are formed.

FIG. 14 is a diagram showing the temperature dependency in the relation between a collector-emitter voltage V_(CE)(sat) and a current density J_(C) according to the first embodiment of the present invention.

FIG. 15 is a diagram showing the relation between the spike density and the variation amount of the ON voltage according to the first embodiment of the present invention.

FIG. 16 is a diagram showing the spike density dependency in the relation between V_(CE)(sat) and the operation temperature of the device according to the first embodiment of the present invention.

FIG. 17 is a diagram showing the relation between the spike density and the film thickness of the collector electrode according to the first embodiment of the present invention.

FIG. 18 shows a concentration distribution along a line XVIII-XVIII in FIG. 1.

FIG. 19 shows a concentration distribution along a line XIX-XIX in FIG. 1.

FIG. 20 is a diagram showing the relation of C_(P,P)/C_(P,N) to V_(CE)(sat) and an energy loss E_(Off) according to the second embodiment of the present invention.

FIG. 21 is a diagram showing the relation of C_(P,P)/C_(P,N) to V_(CE)(sat) and a leakage current density J_(CES) in the IGBT having a withstand voltage of 1200V class, according to the second embodiment of the present invention.

FIG. 22 is a diagram showing the C_(P,P)/C_(P,N) dependency in the relation between V_(CE)(sat) and J_(C) according to the second embodiment of the present invention.

FIG. 23 is a diagram showing the relation of S_(N)/S_(N−) to V_(CE)(sat) and a breakdown voltage BV_(CES) according to the second embodiment of the present invention.

FIG. 24 is a diagram showing the temperature dependency in the relation of C_(S,P) and C_(P,P) to V_(CE)(sat) according to the second embodiment of the present invention.

FIG. 25 is a diagram showing the dependency of each of C_(S,P) and C_(P,P) in the relation between V_(CE)(sat) and the operation temperature of the device according to the second embodiment of the present invention.

FIG. 26 is a diagram showing the temperature dependency of J_(C)-V_(CE) characteristics under the conditions of 5×10¹⁵≦C_(S,P) and 1×10¹⁶≦C_(P,P), according to the second embodiment of the present invention.

FIG. 27 is a diagram showing the temperature dependency of the J_(C)-V_(CE) characteristics under the conditions of 5×10¹⁵>C_(S,P) and 1×10¹⁶>C_(P,P), according to the second embodiment of the present invention.

FIG. 28 is a diagram showing the relation of D_(P,N) or D_(N−) to V_(CE)(Sat) and BV_(CES) according to the second embodiment of the present invention.

FIG. 29 shows another example of the concentration distribution along a line XVIII-XVIII in FIG. 1.

FIG. 30 is a diagram showing the relation between S_(N*)/S_(N) and V_(CE)(sat) according to the second embodiment of the present invention.

FIG. 31 is a diagram showing the relation between a depth x from the second main surface and V_(CE)(sat) according to the second embodiment of the present invention.

FIG. 32 is a diagram showing the relation between τ_(x)/τ_(N−) and V_(CE)(sat) according to the second embodiment of the present invention.

FIG. 33 is a diagram showing an example of the relation between depth x from the second main surface and the carrier lifetime according to the second embodiment of the present invention.

FIG. 34 is a diagram showing the relation of the carrier lifetime to the output of laser annealing and the temperature in a diffusion furnace according to the second embodiment of the present invention.

FIG. 35 is a diagram showing the relation of the ion implantation amount to a carrier activation rate, V_(CE)(sat) and BV_(CES), according to the second embodiment of the present invention.

FIG. 36 is an enlarged cross sectional view schematically showing the second main surface of the semiconductor substrate according to the third embodiment of the present invention.

FIG. 37 is a diagram showing the relation of a center line average roughness R_(a) and a maximum height R_(max) to each of the breaking strength and the carrier lifetime, according to the third embodiment of the present invention.

FIG. 38 is a diagram showing the relation of R_(a) and R_(max) to each of J_(CES) and V_(CE)(sat), according to the third embodiment of the present invention.

FIG. 39 is a cross sectional view showing the configuration of a MOS transistor portion in the semiconductor device according to the fourth embodiment of the present invention.

FIG. 40 is a cross sectional view showing the configuration of the first modification of the semiconductor device according to the fourth embodiment of the present invention.

FIG. 41 is a cross sectional view showing the configuration of the second modification of the semiconductor device according to the fourth embodiment of the present invention.

FIG. 42 is a cross sectional view showing the configuration of the third modification of the semiconductor device according to the fourth embodiment of the present invention.

FIG. 43 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 44 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 45 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 46 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 47 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 48 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 49 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 50 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 51 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 52 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 53 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 54 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 55 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 56 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 57 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 58 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 59 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 60 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 61 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 62 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 63 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 64 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 65 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 66 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 67 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 68 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 69 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 70 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 71 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 72 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 73 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 74 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 75 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 76 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 77 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 78 is a schematic cross sectional view showing the derivative structure of the MOS transistor structure according to the fifth embodiment of the present invention.

FIG. 79 is a schematic cross sectional view showing each type of configuration of a planar gate type IGBT according to the sixth embodiment of the present invention.

FIG. 80 is a schematic cross sectional view showing each type of configuration of the planar gate type IGBT according to the sixth embodiment of the present invention.

FIG. 81 is a schematic cross sectional view showing each type of configuration of the planar gate type IGBT according to the sixth embodiment of the present invention.

FIG. 82 is a schematic cross sectional view showing each type of configuration of the planar gate type IGBT according to the sixth embodiment of the present invention.

FIG. 83 is a schematic cross sectional view showing each type of configuration of the planar gate type IGBT according to the sixth embodiment of the present invention.

FIG. 84 is a diagram schematically showing the concentration distribution of the carrier (n-type impurities) directly below a gate electrode 5 a in the configuration shown in FIGS. 79 to 83.

FIG. 85 is a diagram showing the relation between V_(CE) and J_(C) in each case where an n-type impurity diffusion region is formed and not formed.

FIG. 86 is a diagram showing the relation of S_(N14a)/S_(N−) to V_(CE)(sat), J_(C,Break) and V_(G,Break) according to the sixth embodiment of the present invention.

FIG. 87 is a plan view showing the layout of the semiconductor device according to the seventh embodiment of the present invention.

FIG. 88 is a cross sectional view along a line LXXXVIII-LXVIII in FIG. 87.

FIG. 89 is a cross sectional view along a line LXXXIX-LXXXIX in FIG. 87.

FIG. 90 shows an impurity concentration distribution along a line XC-XC in FIG. 88.

FIG. 91 is a diagram showing the relation between Y/X and BV_(CES) according to the seventh embodiment of the present invention.

FIG. 92 is a diagram showing the relation between D_(T) and BV_(CES) and the relation between D_(T) and E_(P/CS) or E_(P/N−) according to the seventh embodiment of the present invention.

FIG. 93 is a diagram showing the relation of D_(T,Pwell) to BV_(CES) and ΔBV_(CES) according to the seventh embodiment of the present invention.

FIG. 94 is a schematic cross sectional view showing each type of configuration of a planar gate type IGBT according to the seventh embodiment of the present invention.

FIG. 95 is a schematic cross sectional view showing each type of configuration of the planar gate type IGBT according to the seventh embodiment of the present invention.

FIG. 96 is a diagram showing the relations of W_(CS) and X_(CS) to each of V_(CE) and E_(SC).

FIG. 97 is a plan view showing the layout of an n-type emitter region 3 and a p⁺ impurity diffusion region 6 in the semiconductor device according to the seventh embodiment of the present invention.

FIG. 98 is a plan view showing a modification of the layout of n-type emitter region 3 and p⁺ impurity diffusion region 6 in the semiconductor device according to the seventh embodiment of the present invention.

FIG. 99 is a diagram showing the relation of α to V_(CE)(sat) and E_(SC) according to the seventh embodiment of the present invention.

FIG. 100 is a plan view schematically showing the layout of a gate pad according to the eighth embodiment of the present invention.

FIG. 101 is a diagram for illustrating the oscillation phenomenon of the gate voltage.

FIG. 102 is a diagram for illustrating the oscillation phenomenon of the gate voltage.

FIG. 103 is a diagram schematically showing the electric field strength distribution along a line XIX-XIX in FIG. 1 when applying a reverse bias slightly lower than a breakdown voltage to the main junction in the IGBT, according to the ninth embodiment of the present invention.

FIG. 104 is a diagram showing the relation between the breakdown voltage and the electric field intensity in the junction plane according to the ninth embodiment of the present invention.

DESCRIPTION OF THE REFERENCE SIGNS

1 n⁻ drift layer, 1 a gate groove, 1 b emitter groove, 2 p-type body region, 3 n-type emitter region or n-type impurity diffusion region, 4, 4 a gate insulating film, 4 b emitter insulating film, 4 b emitter insulating film, 5 conductive layer, 5 a gate electrode, 5 b emitter conductive layer, 6 p⁺ impurity diffusion region, 7 n-type buffer region, 7 a n-type intermediate layer, 8 p-type collector region, 9, 22A, 22B insulating film, 9 a contact hole, 10 barrier metal layer, 11 emitter electrode, 11 a gate electrode wiring, 12, 12 a collector electrode, 14, 14 a n-type impurity diffusion region, 15 passivation film, 21 a, 21 b silicide layer, 28 gate pad, 28 a resistor body, 31 mask layer, 32, 33 silicon oxide film, 32 a sacrificial oxide film, 41 p-type impurity diffusion region.

BEST MODES FOR CARRYING OUT THE INVENTION

The embodiments of the present invention will be hereinafter described with reference to the accompanying drawings.

[First Embodiment]

FIG. 1 is a schematic cross sectional view showing the configuration of a semiconductor device according to the first embodiment of the present invention. Referring to FIG. 1, the semiconductor device according to the present embodiment is a trench-type IGBT formed on the semiconductor substrate having a thickness t₁ of 50-800 μm, for example, when assuming that the semiconductor device has a withstand voltage of 600-6500V. The semiconductor substrate has the first main surface (upper surface) and the second main surface (underside) facing each other. Assuming that the semiconductor device has a withstand voltage of, for example, 600-6500V, an n⁻ drift layer (drift diffusion layer) 1 has a concentration of 1×10¹² to 1×10¹⁵ cm⁻³. On the first main surface side of the semiconductor substrate, a p-type body region 2 is formed which is made of a p-type semiconductor, for example, having a concentration of approximately 1×10¹⁵ to 1×10¹⁸ cm⁻³ and a diffusion depth of approximately 1.0 to 4.0 μm from the first main surface. On the first main surface in p-type body region 2 (body diffusion layer), an n-type emitter region 3 is formed which is made of an n-type semiconductor, for example, having a concentration of 1×10¹⁸ to 1×10²⁰ cm⁻³ and a diffusion depth of approximately 0.3 to 2.0 μm from the first main surface. On the first main surface, a p⁺ impurity diffusion region 6 (the first emitter diffusion layer) for providing low resistance contact with p-type body region 2 is formed adjacent to this n-type emitter region 3 (the second emitter diffusion layer), for example, so as to have a concentration of approximately 1×10¹⁸ to 1×10²⁰ cm⁻³ and a diffusion depth from the first main surface less than or equal to the depth of n-type emitter region 3.

On the first main surface, a gate groove 1 a is formed so as to extend through n-type emitter region 3 and p-type body region 2 to n⁻ drift layer 1. This gate groove 1 a has a depth, for example, of 3-10 μm from the first main surface and has a pitch, for example, of 2.0 μm to 6.0 μm. Gate groove 1 a has a gate insulating film 4 a formed on its inner surface. For the purpose of improving the characteristics and reliability of the gate insulating film, and device yield, this gate insulating film 4 a has a laminated structure of a silicon oxide film formed by the CVD method and a silicon oxide film formed by the thermal oxidation method or a silicon nitride oxide film in which nitrogen is segregated in the Si/SiO₂ interface.

A gate electrode 5 a, for example, made of polycrystal silicon having phosphorus introduced thereinto in high concentration or made of metal material such as W/TiSi₂ is formed so as to fill gate groove 1 a. It is to be noted that a silicide layer (for example, TiSi₂, CoSi, and the like) may be formed on the surface of gate electrode 5 a for lowering the resistance of gate electrode 5 a. An insulating film 22A made, for example, of a silicon oxide film is formed on the upper surface of gate electrode 5 a. Furthermore, gate electrode 5 a is electrically connected to the control electrode which applies a gate potential G. It is to be noted that gate electrode 5 a may be formed on the first main surface side.

Thus, gate groove 1 a, gate insulating film 4 a and gate electrode 5 a together form a gate trench. Furthermore, n⁻ drift layer 1, n-type emitter region 3 and gate electrode 5 a together form an insulated gate type field effect transistor portion (in this embodiment, a MOS transistor) in which n⁻ drift layer 1 is used as a drain, n-type emitter region 3 is used as a source, and a portion of p-type body region 2 facing gate electrode 5 a across gate insulating film 4 a is used as a channel. In other words, this MOS transistor serves to generate an electric field in the channel by the voltage applied to gate electrode 5 a, and control the current between an emitter electrode 11 and a collector electrode 12 by the electric field in the channel. The first main surface has a plurality of MOS transistors arranged thereon, each of which has the configuration described above.

On the first main surface, for example, an insulating film 9 made of silicate glass and an insulating film 22B made of a silicon oxide film formed by the CVD method are formed. These insulating films 9 and 22B have a contact hole 9 a extending to the first main surface. A barrier metal layer 10 is formed along the inner surface of contact hole 9 a and the upper surface of insulating films 9 and 22B. A silicide layer 21 a is formed in the area where this barrier metal layer 10 and the semiconductor substrate are in contact with each other. Emitter electrode 11 (the first electrode) which applies an emitter potential E is electrically connected to n-type emitter region 3 and p⁺ impurity diffusion region 6 through this barrier metal layer 10 and silicide layer 21 a. It is to be noted that emitter electrode 11 may be formed on the first main surface side.

Furthermore, a p-type collector region 8 (collector diffusion layer) and an n-type buffer region 7 (buffer diffusion layer) are formed on the second main surface side of the semiconductor substrate. Collector electrode 12 (the second electrode) which applies a collector potential C is electrically connected to p-type collector region 8. Collector electrode 12 is formed on the second main surface side of the semiconductor substrate and applies collector potential C. This collector electrode 12 is made of, for example, an aluminum compound. N-type buffer region 7 is formed closer to the first main surface than p-type collector region 8 is. Also, n⁻ drift layer 1 is lower in impurity concentration than n-type buffer region 7 and positioned adjacent to n-type buffer region 7 and closer to the first main surface than n-type buffer region 7 is. P-type collector region 8, n-type buffer region 7 and n⁻ drift layer 1 together form a collector region.

Particularly, when n-type buffer region 7 is provided, the main junction leakage characteristics are decreased and the withstand voltage is increased as compared to the case where n-type buffer region 7 is not provided. In addition, a tail current decreases in the waveform of I_(C) at the time of turning off, which results in a decrease in switching loss (E_(OFF)).

Furthermore, the reason why the diffusion depth of n-type buffer region 7 is shallow is that n-type buffer region 7 is formed after the impurity diffusion region is formed on the MOS transistor side. In other words, this is because the low-temperature annealing technique or the annealing technique for locally raising a temperature as in laser annealing is used when forming n-type buffer region 7, in order to prevent an adverse effect by the high-temperature heat treatment on the impurity diffusion region on the MOS transistor side.

In the semiconductor device according to the present embodiment, for example, when the inverter is connected, it is assumed on the basis of the emitter potential that gate potential G of the control electrode corresponds to a pulsed control signal which is set at −15V in the OFF state and set at +15V in the ON state, and collector potential C of the collector electrode 12 corresponds to a voltage approximately between the power supply voltage and the saturation voltage in accordance with gate potential G.

The manufacturing method according to the present embodiment will then be described.

FIGS. 2-11 each are a schematic cross sectional view showing the method for manufacturing the semiconductor device in order of processes, according to the first embodiment of the present invention. First, referring to FIG. 2, p-type body region 2 having, for example, a peak concentration of 1×10¹⁵ to 1×10¹⁸ cm⁻³ and a diffusion depth of 1.0 to 4.0 μm from the first main surface is formed on the first main surface of the semiconductor substrate including n⁻ drift layer 1. Then, a mask layer 31 is formed above the first main surface.

Referring to FIG. 3, mask layer 31 is patterned. When this patterned mask layer 31 is used as a mask to perform, for example, ion implantation, n-type emitter region 3 having a surface concentration of 1.0×10¹⁸ to 1.0×10²⁰ cm⁻³ and a diffusion depth of 0.3 to 2.0 μm from the first main surface is formed on the first main surface within p-type body region 2. Mask layer 31 is then removed.

Referring to FIG. 4, for example, a silicon oxide film 32 formed by thermal oxidation and a silicon oxide film 33 formed by the CVD method are formed in this order on the first main surface. These silicon oxide films 32 and 33 are patterned by the ordinary photoengraving technique and etching technique. These patterned silicon oxide films 32 and 33 each are used as a mask to subject the semiconductor substrate to anisotropic etching. Consequently, gate groove 1 a is formed so as to extend through n-type emitter region 3 and p-type body region 2 to n⁻ drift layer 1.

Referring to FIG. 5, the process such as isotropic plasma etching and sacrificial oxidation is carried out to round off the opening and the bottom of gate groove 1 a and flatten the sidewall of gate groove 1 a having projections and depressions. Furthermore, the above-mentioned sacrificial oxidation causes a sacrificial oxide film 32 a to be formed integrally with thermal oxide film 32 on the inner surface of gate groove 1 a. Thus, isotropic plasma etching and sacrificial oxidation are carried out to allow improvement in characteristics of the gate insulating film formed on the inner surface of gate groove 1 a. Then, oxide films 32, 32 a and 33 are removed.

Referring to FIG. 6, the first main surface of the semiconductor substrate and the inner surface of gate groove 1 a are exposed by removing the above-described oxide films.

Referring to FIG. 7, gate insulating film 4 a made, for example, of a silicon oxide film is formed along the first main surface and the inner surface of gate groove 1 a. Then, a conductive layer 5 is formed on the entire surface so as to fill gate groove 1 a. Conductive layer 5 is made of material such as polycrystalline silicon having phosphorus introduced thereinto in high concentration or polycrystalline silicon having no impurities introduced thereinto but having phosphorus introduced thereinto by ion implantation, or metal material such as W (tungsten)/TiSi₂ (titanium silicide).

For the purpose of improving the characteristics, reliability and device yield of the gate insulating film, it is preferable to employ, as gate insulating film 4 a, a laminated structure of a silicon oxide film formed by the CVD method and a silicon oxide film formed by thermal oxidation or a nitride oxide film in which nitrogen is segregated in the interface between silicon and silicon oxide.

Then, conductive layer 5 is patterned by the ordinary photoengraving technique and the etching technique.

Referring to FIG. 8, this patterning results in formation of a gate electrode 5 a while the conductive layer remains in gate groove 1 a. In this case, a silicide layer (for example, TiSi₂, COSi and the like) may be formed on the surface of gate electrode 5 a in order to reduce resistance of gate electrode 5 a. Then, the upper surface of gate electrode 5 a is oxidized to form insulating film 22A made of, for example, a silicon oxide film. Then, p⁺ impurity diffusion region 6 is formed which has, for example, a surface concentration of 1.0×10¹⁸ to 1.0×10²⁰ cm⁻³ in the first main surface and a diffusion depth from the first main surface less than n-type emitter region 3.

Referring to FIG. 9, for example, insulating film 9 made of silicate glass and insulating film 22B made of a silicon oxide film formed by the CVD method are formed in this order on the first main surface. Contact hole 9 a is provided in these insulating films 9 and 22B by the ordinary photoengraving technique and the etching technique.

Referring to FIG. 10, a barrier metal layer 10 made, for example, of a metal layer is formed by the sputtering method. Then, lamp annealing is carried out to form a silicide layer 21 a in the contact area between barrier metal layer 10 and the semiconductor substrate. Emitter electrode 11 is subsequently formed.

Referring to FIG. 11, n⁻ drift layer 1 on the second main surface side of the semiconductor substrate is polished to thereby adjust thickness t₁ of the semiconductor substrate in accordance with the withstand voltage required for the MOS transistor. For example, in order to manufacture an IGBT having a withstand voltage of 600V-6500V, n⁻ drift layer 1 should have a thickness t₃ (FIG. 1) of 50 to 800 μm. After polishing, the second main surface of the semiconductor substrate is subjected to etching and the like in order to recover the crystallinity of the polished surface.

Then, after implanting n-type impurities and p-type impurities into the second main surface of the semiconductor substrate, for example, by the ion implantation method, the impurities are diffused. Alternatively, immediately after implanting the n-type impurities and the p-type impurities, heat treatment is performed in accordance with the implantation depth of each of the impurities. Consequently, n-type buffer region 7 and p-type collector region 8 are formed. Furthermore, collector electrode 12 is formed to complete the semiconductor device as shown in FIG. 1. Collector electrode 12 is made, for example, of metal material, such as aluminum or the like, that provides an ohmic contact property with p-type collector region 8.

In the present embodiment, after forming emitter electrode 11 as shown in FIG. 11, the second main surface of n⁻ drift layer 1 may be polished to form n-type buffer region 7 and p-type collector region 8. Furthermore, as shown in FIG. 2, the second main surface may be polished before formation of p-type body region 2. Also, as shown in FIG. 9, after or before contact hole 9 a is opened, the second main surface may be polished to form n-type buffer region 7 and p-type collector region 8.

In the present embodiment, the spike density in the interface between the semiconductor substrate and collector electrode 12 (density of the spikes made of an alloy formed by the reaction between the semiconductor material forming p-type collector region 8 and the metal material on the p-type collector region 8 side in collector electrode 12) is not less than 0 and not more than 3×10⁸ unit/cm².

FIGS. 12 and 13 each are a diagram schematically showing the state of the interface between the p-type collector region and the collector electrode in which spikes are formed. FIG. 12 shows a cross sectional view and FIG. 13 shows a plan view. Referring to FIGS. 12 and 13, a plurality of spikes are generally formed in the interface between p-type collector region 8 and collector electrode 12. A spike is a projection (or a depression) having a shape of, for example, a four-sided or eight-sided pyramid and made of an alloy of the material forming collector electrode 12 and the material forming p-type collector region 8. In the case where collector electrode 12 is formed of a multilayer film, a spike is formed of an alloy of the material forming a layer 12 a which is in direct contact with p-type collector region 8 and the material forming p-type collector region 8.

The spike density is measured, for example, by the following methods. First, collector electrode 12 is dissolved using chemical solution to remove it from the semiconductor substrate. The second main surface of the exposed semiconductor substrate is then observed with a microscope, to count the number of depressions each having a four-sided or eight-sided pyramid and existing in the second main surface. The resultant number is divided by the observed area to obtain a value which is defined as a spike density.

When the spike density is increased, the ionization rate of the impurities in p-type collector region 8 at low temperature (298K or lower) is decreased, and the effective efficiency of implantation of the carrier (hole) from p-type collector region 8 into n-type buffer region 7 is also decreased. Thus, the J_(C)-V_(CE) characteristics of the IGBT depend on the spike density.

The spike density set at not less than 0 and not more than 3×10⁸ unit/cm² allows the following effects to be achieved. FIG. 14 is a diagram showing the temperature dependency in the relation between the collector-emitter voltage and the current density according to the first embodiment of the present invention. Referring to FIG. 14, V_(CE)(sat) represents an emitter-collector voltage corresponding to an arbitrary rated current density. At temperatures of 298K and 398K, the curves are almost the same in both cases where the spike density is not less than 3×10⁸ unit/cm² and is not more than 3×10⁸ unit/cm². In contrast, at a temperature of 233K, the emitter-collector voltage is significantly increased in the case where the spike density is not more than 3×10⁸ unit/cm².

FIG. 15 is a diagram showing the relation between the spike density and the variation amount of the ON voltage according to the first embodiment of the present invention. FIG. 15 shows the results obtained when p-type collector region 8 and n-type buffer region 7 are set under the fixed conditions (concentration, depth). Furthermore, an ON-voltage variation amount ΔV_(on) in FIG. 15 represents a value obtained by subtracting collector-emitter voltage V_(CE)(sat) at 233K (233K) from collector-emitter voltage V_(CE)(sat) at 298K (298K). Referring to FIG. 15, when a spike density C_(spike) is not more than 3×10⁸ unit/cm², collector-emitter voltage V_(CE)(sat) at 298K represents a value not less than collector-emitter voltage V_(CE)(sat) at 233K. In contrast, when spike density D_(spike) exceeds 3×10⁸ unit/cm², collector-emitter voltage V_(CE)(sat) at 298K represents a value less than collector-emitter voltage V_(CE)(sat) at 233K.

FIG. 16 is a diagram showing the spike density dependency in the relation between the collector-emitter voltage and the operation temperature of the device according to the first embodiment of the present invention. Referring to FIG. 16, the temperature dependency of voltage V_(CE)(sat) is rendered positive when spike density D_(spike) is not more than 3×10⁸ unit/cm², whereas the temperature dependency of voltage V_(CE)(sat) is rendered negative in a region at a temperature lower than 298K when spike density D_(spike) is not less than 3×10⁸ unit/cm².

As described above, the temperature dependency of collector-emitter voltage V_(CE) can be rendered positive by setting the spike density in the interface between the semiconductor substrate and collector electrode 12 at not less than 0 and not more than 3×10⁸ unit/cm² as in the present embodiment. Consequently, the concentrated flow of the current into the IGBT having a low voltage V_(CE) can be prevented when the IGBTs are operated in parallel. Accordingly, the semiconductor device suitable for parallel operation can be implemented.

The spike density can be controlled, for example, by the material properties of the collector electrode, the heat treatment conditions, or the film thickness of the collector electrode. As to the material properties of the collector electrode, Al, AlSi, Ti, and silicide containing metal are suitable. Silicide containing metal may include silicide containing Ti, silicide containing Ni, or silicide containing Co. Furthermore, as to the material properties of the collector electrode, it is preferable to employ the material, for example, such as Al and AlSi, which exhibits an ohmic resistance property in the interface with the contacting semiconductor layer (p-type collector region 8 in FIG. 1). As to the material properties of the semiconductor substrate, Si, SiC, GaN, or Ge is suitable. In particular, when silicide is used as a collector electrode, no spike is formed in the interface between the semiconductor substrate and the collector electrode. The collector electrode made of silicide is formed by forming metal containing Ti, Co, Ni or the like on the second main surface of the semiconductor substrate made of Si, SiC, GaN, Ge or the like and subjecting it to heat treatment.

Furthermore, it is preferable that the film thickness of the collector electrode is 200 nm or more. FIG. 17 is a diagram showing the relation between the spike density and the film thickness of the collector electrode according to the first embodiment of the present invention. Referring to FIG. 17, when the collector electrode has a film thickness of not less than 200 nm, the spike density is not more than 3×10⁸ unit/cm². However, in light of manufacturing limitation, it is preferable that the collector electrode has a film thickness of not more than 10000 nm.

The spike density can be set at not less than 0 and not more than 3×10⁸ unit/cm² by appropriately combining the material properties of the collector electrode, the heat treatment conditions, or the film thickness of the collector electrode as described above.

Although the case where the IGBT has a configuration shown in FIG. 1 has been described in the present embodiment, the semiconductor device of the present invention is not limited to the configuration in FIG. 1, but may be provided with a semiconductor substrate having the first main surface and the second main surface facing each other, and an element. This element includes the gate electrode formed on the first main surface side, the first electrode formed on the first main surface side, and the second electrode formed in contact with the second main surface. This element serves to generate an electric field in the channel by the voltage applied to the gate electrode, and control the current between the first electrode and the second electrode by the electric field in the channel. Furthermore, it may also have a device structure such as a diode.

[Second Embodiment]

FIG. 18 shows a concentration distribution along a line XVIII-XVIII in FIG. 1. FIG. 19 shows a concentration distribution along a line XIX-XIX in FIG. 1. It is to be noted that FIG. 18 also shows the concentration distribution of the p-type impurities or the n-type impurities in the conventional case.

Referring to FIGS. 18 and 19, a concentration C_(S,P) represents an impurity concentration in p-type collector region 8 in the interface between collector electrode 12 and p-type collector region 8 (the second main surface of the semiconductor substrate), and a concentration C_(P,P) represents the maximum value of the impurity concentration in p-type collector region 8. A concentration C_(P,N) represents the maximum value of the impurity concentration in n-type buffer region 7. A concentration C_(sub) represents an impurity concentration in n⁻ drift layer 1. A depth D_(P) represents a depth from the second main surface to the junction plane between p-type collector region 8 and n-type buffer region 7. A depth D_(P,N) represents a depth from the second main surface to the position where concentration C_(P,N) in n-type buffer region 7 is achieved. A depth D_(N−) represents a depth from the second main surface to the junction plane between n-type buffer region 7 and n⁻ drift layer 1. As set forth below with reference to FIG. 29, in the case where an n-type intermediate layer 7 a is formed, a depth D_(N) represents a depth from the second main surface to the junction plane between n-type buffer region 7 and n-type intermediate layer 7 a. Furthermore, τ_(P) represents a carrier lifetime of p-type collector region 8, τ_(N) represents a carrier lifetime of n-type buffer region 7, and τ_(N−) represents a carrier lifetime of n⁻ drift layer 1. Also, τ_(x) represents a carrier lifetime in the position at a depth of x from the second main surface. In addition, S_(N) represents the number of atoms per unit area (atom/cm²) of the impurities forming n-type buffer region 7, and S_(N−) represents the number of atoms per unit area (atom/cm²) of the impurities forming n⁻ drift layer 1. The number of atoms per unit area of the impurities in the desired region is obtained by integrating the impurity concentration profile in that region with respect to the entire depth direction.

The inventor of the present application found that the abnormal operation of the IGBT can be prevented by establishing the relation among p-type collector region 8, n-type buffer region 7 and n⁻ drift layer 1 under the following conditions. The meaning of preventing the abnormal operation of the IGBT will be described below.

a. Snap-back characteristics do not occur in the J_(C)-V_(CE) characteristics at a temperature of 298K or lower.

b. The IGBT is turned on even at a low temperature of 298K or lower.

c. A desired withstand voltage is achieved, or thermal runaway does not occur in the IGBT at a temperature of 398K or more.

FIG. 20 is a diagram showing the relation of C_(P,P)/C_(P,N) to V_(CE)(sat) and an energy loss E_(Off) at the time of turning off, according to the second embodiment of the present invention. E_(Off) represents an energy loss at the time when the switching device is turned off V_(snap-back) represents a collector-emitter voltage at a point A shown in FIG. 22 in the case where the snap-back characteristics occur. FIG. 21 is a diagram showing the relation of C_(P,P)/C_(P,N) to V_(CE)(sat) and a leakage current density J_(CES) in the IGBT according to the second embodiment of the present invention. Leakage current density J_(CES) represents a leakage current density between the collector and the emitter in the state where a short circuit occurs between the gate and the emitter. Referring to FIGS. 20 and 21, in the case where the ratio C_(P,P)/C_(P,N) of the maximum value of the impurity concentration in p-type collector region 8 to the maximum value of the impurity concentration in n-type buffer region 7 is C_(P,P)/C_(P,N)<1, the snap-back characteristics occur, which causes generation of a snap-back voltage V_(snap-back) accordingly. Consequently, as shown in FIG. 22, V_(CE)(sat) to the arbitrary current density is increased under the condition of C_(P,P)/C_(P,N)<1. Furthermore, under the condition of C_(P,P)/C_(P,N)>1×10³, J_(CES) is increased to cause thermal runaway of the IGBT. In view of the foregoing, the condition of 1≦C_(P,P)/C_(P,N)≦1×10³ is preferable in order to prevent the abnormal operation of the IGBT.

FIG. 23 is a diagram showing the relation of S_(N)/S_(N−) to V_(CE)(sat) and a breakdown voltage BV_(CES) according to the second embodiment of the present invention. Breakdown voltage BV_(CES) represents a breakdown voltage between the collector and the emitter in the state where a short circuit occurs between the collector and the emitter. Referring to FIG. 23, in the case where the ratio S_(N)/S_(N−) of the number of atoms per unit area (atom/cm²) of the impurities forming n-type buffer region 7 to the number of atoms per unit area (atom/cm²) of the impurities forming n⁻ drift layer 1 is 0.05≦S_(N)/S_(N−), a high breakdown voltage BV_(CES) is achieved. Furthermore, in the case where S_(N)/S_(N−) shows the condition of S_(N)/S_(N−)≦100, the snap-back characteristics are suppressed and emitter-collector voltage V_(CE)(sat) is also kept low. In view of the foregoing, the condition of 0.05≦S_(N)/S_(N−)≦100 is preferable in order to prevent the abnormal operation of the IGBT to allow parallel operation.

FIG. 24 is a diagram showing the temperature dependency in the relation of C_(S,P) and C_(P,P) to V_(CE)(sat) according to the second embodiment of the present invention. Referring to FIG. 24, at any of temperatures of 233K, 298K and 398K, emitter-collector voltage V_(CE)(sat) is significantly decreased under the conditions of 5×10¹⁵≦C_(S,P) and 1×10¹⁶≦C_(P,P). In addition, in light of manufacturing limitations, the conditions of C_(S,P)≦1.0×10²² cm⁻³ and C_(P,P)≦1.0×10²² cm⁻³ are preferable.

FIG. 25 is a diagram showing the dependency of each of C_(P,P) and C_(P,P) in the relation between V_(CE)(sat) and the operation temperature of the device according to the second embodiment of the present invention. FIGS. 26 and 27 each are a diagram showing the temperature dependency of the J_(C)-V_(CE) characteristics according to the second embodiment of the present invention. As can be seen from FIGS. 24-27, the temperature dependency of V_(CE)(sat) is rendered positive under the conditions of 5×10¹⁵≦C_(S,P) and 1×10¹⁶≦C_(P,P).

In view of the foregoing, the conditions of 5×10¹⁵≦C_(S,P) and 1×10¹⁶≦C_(P,P) are preferable in order to prevent abnormal operation of the IGBT.

FIG. 28 is a diagram showing the relation of D_(P,N) or D_(N−) to V_(CE)(sat) and BV_(CES) according to the second embodiment of the present invention. Referring to FIG. 28, when depth D_(P,N) from the second main surface to the position where concentration C_(P,N) in n-type buffer region 7 is achieved is 0.4 μm D_(P,N), or when depth D_(N−) from the second main surface to the junction plane between n-type buffer region 7 and n⁻ drift layer 1 is 0.4 μm≦D_(N−), high breakdown voltage BV_(CES) and low emitter-collector voltage V_(CE)(sat) are attained. On the other hand, the snap-back characteristics occur under the condition of D_(P,N)>50 μm or D_(N−)>50 μm.

In view of the foregoing, the conditions of 0.4 μm≦D_(P,N)≦50 μm and 0.4 μm≦D_(N−)≦50 μm are preferable in order to prevent abnormal operation of the IGBT.

FIG. 29 shows another example of the concentration distribution along a line XVIII-XVIII in FIG. 1. Referring to FIG. 29, the collector region may further include n-type intermediate layer 7 a. A maximum value C_(P,N*) of the impurity concentration in n-type intermediate layer 7 a is lower than a maximum value C_(P,N) of the impurity concentration in n-type buffer region 7 and higher than impurity concentration C_(sub) in n⁻ drift layer 1. Furthermore, n-type intermediate layer 7 a is in contact with both of n-type buffer region 7 and n⁻ drift layer 1. A depth D_(N) represents a depth from the second main surface to the junction plane between n-type buffer region 7 and n-type intermediate layer 7 a. A depth D_(N*) represents a depth from the second main surface to the junction plane between n-type intermediate layer 7 a and n ⁻ drift layer 1. S_(N*) represents the number of atoms per unit area (atom/cm²) of the impurities forming n-type intermediate layer 7 a. Furthermore, n-type intermediate layer 7 a may be formed by implanting impurity ions into a part of n-type buffer region 7. Also, it may also be formed by implanting ions causing crystal defects resulting in a lifetime killer into a part of n-type buffer region 7 by the method employing proton irradiation and the like.

FIG. 30 is a diagram showing the relation between S_(N*)/S_(N) and V_(CE)(sat) according to the second embodiment of the present invention. Referring to FIG. 30, in the case where the ratio S_(N*)/S_(N) of the number of atoms per unit area (atom/cm²) of the impurities forming n-type intermediate layer 7 a to the number of atoms per unit area (atom/cm²) of the impurities forming n-type buffer region 7 is 0.5<S_(N*)/S_(N), the snap-back characteristics occur.

In view of the foregoing, the condition of 0<S_(N*)/S_(N)≦0.5 is preferable in order to prevent abnormal operation of the IGBT.

FIG. 31 is a diagram showing the relation between a depth x from the second main surface and V_(CE)(sat) according to the second embodiment of the present invention. FIG. 32 is a diagram showing the relation between τ_(x)/τ_(N−) and V_(CE)(sat) according to the second embodiment of the present invention. FIG. 33 is a diagram showing an example of the relation between depth x from the second main surface and the carrier lifetime according to the second embodiment of the present invention. Particularly referring to FIG. 33, defects are introduced into the semiconductor substrate in the vicinity of the second main surface during ion implantation for forming p-type collector region 8 and n-type buffer region 7. Since it is necessary to implant impurities more deeply when forming n-type buffer region 7 than when forming p-type collector region 8, n-type buffer region 7 is required to be annealed at a temperature higher than that for p-type collector region 8. Consequently, n-type buffer region 7 suffers thermal stress by annealing, with the result that carrier lifetime τ_(N) of n-type buffer region 7 is decreased below carrier lifetime τ_(P) of p-type collector region 8. Furthermore, the carrier lifetime of each of n-type buffer region 7 and p-type collector region 8 is decreased below carrier lifetime τ_(N−) of n⁻ drift layer 1.

Thus, as the ratio τ_(x)/τ_(N−) of carrier lifetime τ_(x) at depth x from the second main surface to carrier lifetime τ_(N−) of n⁻ drift layer 1 is set under the condition of 1×10⁻⁶≦τ_(x)/τ_(N−)≦1 particularly in the region where depth x from the second main surface is 0.50 μm≦x≦60.0 μm, collector-emitter voltage V_(CE)(sat) is significantly decreased as shown particularly in FIGS. 31 and 32.

In this case, a decrease in the carrier lifetime is caused by introducing defects into p-type collector region 8 and n-type buffer region 7 when implanting ions for forming p-type collector region 8 and n-type buffer region 7. The method of annealing the portion having defects introduced thereinto is effective in improving the carrier lifetime. The relation between the annealing technique and the carrier lifetime will then be described.

FIG. 34 is a diagram showing the relation of the carrier lifetime to the output of laser annealing and the temperature in a diffusion furnace according to the second embodiment of the present invention. Referring to FIG. 34, in the case where annealing is performed in the diffusion furnace, an excessively high temperature in the diffusion furnace causes a decrease in the carrier lifetime. Furthermore, when laser annealing is performed with high output energy by the laser annealing technique, the carrier lifetime is also decreased. In addition, since a laser beam has the property of attenuating within the semiconductor substrate, the output power of laser annealing needs to be increased when the depth from the second main surface of the semiconductor substrate to the junction plane between p-type collector region 8 and n-type buffer region 7 is excessively large. This makes it difficult to improve the carrier lifetime by laser annealing. In consideration of the above situation, it is preferable that the depth from the second main surface of the semiconductor substrate to the junction plane between p-type collector region 8 and n-type buffer region 7 is greater than 0 and not more than 1.0 μm.

FIG. 35 is a diagram showing the relation of the ion implantation amount to the carrier activation rate, V_(CE)(sat) and BV_(CES), according to the second embodiment of the present invention. Referring to FIG. 35, the activation rate in each of n-type buffer region 7 and p-type collector region 8 depends on the ion implantation amount or the type of ions in n-type buffer region 7 and p-type collector region 8. In FIG. 35, the activation rate in p-type collector region 8 is different from that in n-type buffer region 7, and the activation rate in p-type collector region 8 is lower than that in n-type buffer region 7. This allows the IGBT to be normally operated to increase breakdown voltage BV_(CES). In particular, in the case where the activation rate in p-type collector region 8 is greater than 0 and not more than 90%, collector-emitter voltage V_(CE)(sat) is greatly decreased.

The activation rate is calculated by the following expression (1). Activation rate: {(impurity concentration (cm⁻³) obtained from the resistance value calculated by the method such as an SR (spreading-resistance) measurement)/(impurity concentration (cm⁻³) measured using an SIMS (Secondary Ionization Mass Spectrometer))}×100  (1)

By using the above-described collector structure, the normal operation of the IGBT can be ensured, a high withstand voltage can be maintained, and thermal runaway of the IGBT can be suppressed. Furthermore, the flexibility (controllability) of the trade-off characteristics of V_(CE)(sat)-E_(OFF) can be achieved even with the N⁻ drift layer reduced in thickness, when the device characteristics are to be improved.

[Third Embodiment]

It is effective to reduce the thickness of n⁻ drift layer 1 in order to improve the V_(CE)(sat)-E_(Off) characteristics regarded as important device characteristics of the IGBT. However, the inventor of the present application found that the surface roughness of the polished surface affects each characteristic of the IGBT when the second main surface of the semiconductor substrate is polished as shown in FIG. 11.

FIG. 36 is an enlarged cross sectional view schematically showing the second main surface of the semiconductor substrate according to the third embodiment of the present invention. Referring to FIG. 36, the center line average roughness defined in the present embodiment represents a center line average roughness R_(a) specified in JIS (Japanese Industrial Standard) and corresponds to an average value of the absolute value deviation from the center line. Furthermore, the maximum height represents a maximum height R_(max) specified in JIS and corresponds to a height (R_(max)=H_(max)−H_(mm)) from the bottom of the valley (height H_(max)) to the highest peak (height H_(max)) in the reference length.

FIG. 37 is a diagram showing the relation of each of the center line average roughness and the maximum height to the breaking strength and the carrier lifetime, according to the third embodiment of the present invention. Referring to FIG. 37, under the conditions of 0<R_(a)≦200 nm and 0<R_(max)≦2000 nm, high breaking strength and carrier lifetime can be achieved. FIG. 38 is a diagram showing the relation of each of the center line average roughness and the maximum height to J_(CES) and V_(CE)(sat), according to the third embodiment of the present invention. Referring to FIG. 38, under the conditions of 0<R_(a)≦200 nm and 0<R_(max)≦2000 nm, low collector-emitter voltage V_(CE)(sat) and low leakage current density J_(CES) can be achieved.

As described above, various characteristics of the IGBT can be improved under the conditions of 0<R_(z)≦200 nm or 0<R_(max)≦2000 nm.

[Fourth Embodiment]

In the present embodiment, the configuration of the MOS transistor producing the same effect as that obtained by the configuration according to each of the first to third embodiments will then be described.

FIG. 39 is a cross sectional view showing the configuration of a MOS transistor portion in the semiconductor device according to the fourth embodiment of the present invention. Referring to FIG. 39, a structure D in the MOS transistor portion according to the present embodiment is different from a structure C shown in FIG. 1 in that an n-type impurity diffusion region 14 (buried diffusion layer) having a relatively high concentration is provided in the vicinity of the region where n⁻ drift layer 1 forms a pn junction with p-type body region 2. N-type impurity diffusion region 14 is formed between p-type body region 2 and n⁻ drift layer 1. Although not shown, a structure A shown in FIG. 1 is formed below structure D in FIG. 39.

It is to be noted that since the configurations other than those described above are almost the same as the configuration of structure C shown in FIG. 1, the same components are designated by the same reference characters, and description thereof will not be repeated.

The configuration provided with n-type impurity diffusion region 14 is not limited to the configuration in FIG. 39, but may be the configuration shown, for example, in FIGS. 40 and 41. In other words, n-type impurity diffusion region 14 may be provided in the configuration including an emitter trench.

FIG. 40 is a cross sectional view showing the configuration of the modification of the semiconductor device according to the fourth embodiment of the present invention. Referring to FIG. 40, structure E is provided with an emitter trench in the region interposed between two MOS transistors. The emitter trench is formed of an emitter groove 1 b, an emitter insulating film 4 b and an emitter conductive layer 5 b. Emitter groove 1 b extends through p-type body region 2 and n-type impurity diffusion region 14 to n⁻ drift layer 1. Emitter insulating film 4 b is formed along the inner surface of emitter groove 1 b. Emitter conductive layer 5 b is formed so as to fill emitter groove 1 b and electrically connected to emitter electrode 11 located thereabove. Any number of emitter trenches may be formed, and a gate trench only needs to be formed in at least one of a plurality of grooves.

Barrier metal layer 10 is formed below emitter electrode 11, and a silicide layer 21 b is formed between this barrier metal layer 10 and emitter conductive layer 5 b.

On the first main surface interposed between two emitter trenches, p⁺ impurity diffusion region 6 for providing low resistance contact with p-type body region 2 is formed, on which silicide layer 21 a is formed.

In the configuration as described above, n-type impurity diffusion region 14 having a relatively high concentration is provided in the vicinity of the region where n⁻ drift layer 1 forms a pn junction with p-type body region 2.

It is to be noted that since the configurations other than those described above are almost the same as the configuration of structure D shown in FIG. 39, the same components are designated by the same reference characters, and description thereof will not be repeated.

Furthermore, a structure F shown in FIG. 41 is different from structure E shown in FIG. 40 in that n-type impurity diffusion region 3 is additionally provided on the sidewall of the emitter trench and on the first main surface.

It is to be noted that since the configurations other than those described above are almost the same as the configuration of structure E shown in FIG. 39, the same components are designated by the same reference characters, and description thereof will not be repeated.

In FIGS. 40 and 41, although the case where emitter conductive layer 5 b filling emitter groove 1 b is at an emitter potential has been described, this emitter conductive layer 5 b may have a floating potential. The configuration thereof will be described below.

Referring to FIG. 42, emitter conductive layer 5 b filling emitter groove 1 b is electrically separated from emitter electrode 11, and has a floating potential. In this case, an insulating film 22A made of, for example, a silicon oxide film, an insulating film 9 made of, for example, silicate glass, and an insulating film 22B made of, for example, a silicon oxide film are formed on emitter conductive layer 5 b filling emitter groove 1 b.

It is to be noted that since the configurations other than those described above are almost the same as the configuration of structure E shown in FIG. 40, the same components are designated by the same reference characters, and description thereof will not be repeated.

N-type impurity diffusion region 14 provided in the present embodiment is formed by ion implantation and diffusion before p-type body region 2 is formed. Then, p-type body region 2 is formed and subjected to the post process similar to those in the first embodiment, to manufacture each type of semiconductor device according to the present embodiments (FIGS. 39-42).

Furthermore, each of MOS transistor structures E (FIG. 40), F (FIG. 41) and G (FIG. 42) includes a trench having an emitter potential or a floating potential, to thereby cause an effective gate width less than those in MOS transistor structures C (FIG. 1) and D (FIG. 39). As a result, each of structures E, F and G receives a current which is less than the current flowing through each of structures C and D, and therefore, achieves an effect of suppressing the saturation current.

Furthermore, in each of structures E, F and G, the on-state voltage is increased in the area where the voltage/current density is lower than that in structure D. The reason why the ON voltage falls in MOS transistor structure D is that n-type impurity diffusion region 14 disclosed in U.S. Pat. No. 6,040,599 produces the carrier storage effect even if collector structure A has a thick n⁻ drift layer 1. MOS transistor structure D produces an effect of reducing the ON voltage even if n⁻ drift layer 1 is thicker than that in the conventional structure.

In MOS transistor structures E, F and G, the effect of reducing the saturation current allows an arbitrary current to be maintained for a period of time longer than that in the case of the conventional structure or MOS transistor structures C and D when the device performs switching under unloaded conditions. In other words, MOS transistor structures E, F and G each produce an effect of suppressing the saturation current in the device and improving breakdown tolerance.

Furthermore, in MOS transistor structure D having an effect of lowering the ON voltage, an oscillation phenomenon occurs at the time of the switching under unloaded conditions. In contrast, MOS transistor structures E, F and G each produce an effect of preventing the oscillation phenomenon because emitter conductive layer 5 b having an emitter potential or a floating potential exists even though n-type impurity diffusion region 14 is provided therein.

[Fifth Embodiment]

FIGS. 43-78 each are a cross sectional view showing each type of derivative structure of the MOS transistor structure producing the same effect as that in the fourth embodiment. The structure shown in each of FIGS. 43-78 can achieve the effect produced by the MOS transistor structure as illustrated in the fourth embodiment.

Each MOS transistor structure shown in FIGS. 43-78 will be hereinafter described.

The configuration shown in FIG. 43 is different from the configuration of structure E shown in FIG. 40 in that one emitter trench being at an emitter potential is provided in the region interposed between two MOS transistor portions and that n-type emitter region 3 is formed only on one side surface of gate groove 1 a.

In the configuration shown in FIG. 44, emitter conductive layer 5 b made of an integrated single layer fills a plurality of emitter grooves 1 b. Emitter conductive layer 5 b is electrically connected to barrier metal layer 10 and emitter electrode 11 through silicide layer 21 b. Silicide layer 21 b is formed on a bridge connecting emitter grooves 1 b to each other. Furthermore, insulating films 22A, 9 and 22B are formed on emitter conductive layer 5 b other than the area where silicide layer 21 b is formed.

It is to be noted that since the configurations other than those described above are almost the same as the configuration of the above-described structure E shown in FIG. 40, the same components are designated by the same reference characters, and description thereof will not be repeated.

The configuration shown in FIG. 45 is different from the configuration shown in FIG. 44 in that n-type impurity diffusion region 3 is additionally provided on both sidewalls of emitter groove 1 b and on the first main surface.

The configuration shown in FIG. 46 is different from the configuration in FIG. 44 in that emitter conductive layer 5 b filling emitter groove 1 b is at a floating potential. In this case, insulating films 22A, 9 and 22B are formed on the entire surface of emitter conductive layer 5 b which is electrically insulated from emitter electrode 11.

The configuration shown in FIG. 47 is different from the configuration shown in FIG. 43 in that n-type impurity diffusion region 3 is additionally provided on both sidewalls of emitter groove 1 b and on the first main surface.

The configuration shown in FIG. 48 is different from the configuration shown in FIG. 43 in that the upper surface of emitter conductive layer 5 b protrudes above emitter groove 1 b. In this case, emitter conductive layer 5 b is electrically connected to barrier metal layer 10 and emitter electrode 11 through silicide layer 21 b formed on a part of the surface of emitter conductive layer 5 b. Furthermore, insulating films 22A, 9 and 22B are formed on emitter conductive layer 5 b other than the area where silicide layer 21 b is formed.

The configuration shown in FIG. 49 is different from the configuration shown in FIG. 48 in that n-type impurity diffusion region 3 is additionally provided on both side surfaces of emitter groove 1 b and on the first main surface.

The configuration shown in FIG. 50 is different from the configuration of structure E shown in FIG. 40 in that p-type body region 2 is formed only in the vicinity of the sidewall of gate groove 1 a.

The configuration shown in FIG. 51 is different from the configuration of structure F shown in FIG. 41 in that p-type body region 2 is formed only in the vicinity of the sidewall of gate groove 1 a.

The configuration shown in FIG. 52 is different from the configuration shown in FIG. 50 in that emitter conductive layer 5 b filling emitter groove 1 b is at a floating potential. In this case, insulating films 22A, 9 and 22B are formed on emitter conductive layer 5 b.

The configuration shown in FIG. 53 is different from the configuration shown in FIG. 43 in that p-type body region 2 is formed only in the area interposed between two gate trenches.

The configuration shown in FIG. 54 is different from the configuration shown in FIG. 44 in that p-type body region 2 is formed only in the vicinity of the sidewall of gate groove 1 a.

The configuration shown in FIG. 55 is different from the configuration shown in FIG. 45 in that p-type body region 2 is formed only in the vicinity of the sidewall of gate groove 1 a.

The configuration shown in FIG. 56 is different from the configuration shown in FIG. 46 in that p-type body region 2 is formed only in the vicinity of the sidewall of gate groove 1 a.

The configuration shown in FIG. 57 is different from the configuration shown in FIG. 53 in that n-type impurity diffusion region 3 is additionally provided on both sidewalls of emitter groove 1 b and on the first main surface.

The configuration shown in FIG. 58 is different from the configuration shown in FIG. 48 in that p-type body region 2 is formed only in the area interposed between two gate trenches.

The configuration shown in FIG. 59 is different from the configuration shown in FIG. 49 in that p-type body region 2 is formed only in the area interposed between two gate trenches.

In the configuration shown in FIG. 60, a gate trench is formed so as to have a gate width (W) equal to that in each of the above-described MOS transistor structures E-G without forming a trench in the region provided with an emitter trench in structure E shown in FIG. 40, that is, the distance between the gate trenches is increased to an arbitrary dimension so as to achieve an emitter potential.

In this case, p⁺ impurity diffusion region 6 for providing low resistance contact with the p-type body region extends on the first main surface interposed between two gate trenches. Silicide layer 21 a is formed so as to be brought into contact with p⁺ impurity diffusion region 6 and n-type emitter region 3. P⁺ impurity diffusion region 6 and n-type emitter region 3 are electrically connected to emitter electrode 11 through silicide layer 21 a and barrier metal layer 10.

It is to be noted that since the configurations other than those described above are almost the same as the above-described configuration in FIG. 40, the same components are designated by the same reference characters, and description thereof will not be repeated.

In the configuration shown in FIG. 61, a gate trench is formed so as to have a gate width equal to that in each of the above-described MOS transistor structures E-G without forming a trench in the region provided with an emitter trench in FIG. 43, that is, the distance between the gate trenches is increased to an arbitrary dimension so as to achieve an emitter potential.

Also in this configuration, p⁺ impurity diffusion region 6 extends on the first main surface interposed between the gate trenches so as to provide low resistance contact with the p-type body region. Silicide layer 21 a is formed so as to be brought into contact with p⁺ impurity diffusion region 6 and n-type emitter region 3. P⁺ impurity diffusion region 6 and n-type emitter region 3 are electrically connected to emitter electrode 11 through silicide layer 21 a and barrier metal layer 10.

It is to be noted that since the configurations other than those described above are almost the same as the above-described configuration in FIG. 43, the same components are designated by the same reference characters, and description thereof will not be repeated.

FIG. 62 is different in configuration from FIG. 60 in that p-type body region 2 is formed only in the vicinity of the sidewall of gate groove 1 a.

The configuration shown in FIG. 63 is different from the configuration shown in FIG. 61 in that p-type body region 2 is formed only in the area interposed between two gate trenches.

Although the case where the upper surface of gate electrode 5 a is located within gate groove 1 a has been explained in the above description, the upper surface may protrude above gate groove 1 a. FIGS. 64-74 each show the configuration in which the upper surface of gate electrode 5 a protrudes above the upper surface of gate groove 1 a.

The configuration in FIG. 64 corresponds to the configuration of structure E shown in FIG. 40, the configuration in FIG. 65 corresponds to the configuration shown in FIG. 41, the configuration in FIG. 66 corresponds to the configuration shown in FIG. 42, the configuration in FIG. 67 corresponds to the configuration shown in FIG. 43, the configuration in FIG. 68 corresponds to the configuration shown in FIG. 44, the configuration in FIG. 69 corresponds to the configuration shown in FIG. 45, the configuration in FIG. 70 corresponds to the configuration shown in FIG. 46, the configuration in FIG. 71 corresponds to the configuration shown in FIG. 47, the configuration in FIG. 72 corresponds to the configuration shown in FIG. 48, the configuration in FIG. 73 corresponds to the configuration shown in FIG. 49, and the configuration in FIG. 74 corresponds to the configuration shown in FIG. 50, except that the upper surface of gate electrode 5 a protrudes above gate groove 1 a. It is to be noted that, in the configuration shown in FIG. 66, the upper surface of emitter conductive layer 5 b filling emitter groove 1 b also protrudes above emitter groove 1 b.

Although a trench-type gate structure has been explained in the above description, the configuration in each of the first to fourth embodiments can also be applied in a planar gate type IGBT. FIGS. 75-78 each are a schematic cross sectional view showing the configuration of the planar gate type IGBT.

Referring to FIG. 75, a planar gate type IGBT is formed in the semiconductor substrate, for example, having a thickness of about 50 μm to 250 μm. P-type body region 2 made of a p-type semiconductor is selectively formed on the first main surface side of n⁻ drift layer 1 having a concentration of 1×10¹⁴ cm⁻³, for example. P-type body region 2 has, for example, a concentration of 1×10¹⁵ to 1×10¹⁸ cm⁻³ and a diffusion depth of about 1.0-4.0 μm from the first main surface. N-type emitter region 3 made of an n-type semiconductor having, for example, a concentration of 1×10¹⁸ to 1×10²⁰ cm⁻³ and more and a diffusion depth of about 0.3-2.0 μm from the first main surface is formed on the first main surface in p-type body region 2. P⁺ impurity diffusion region 6 for providing low resistance contact with p-type body region 2 is formed adjacent to this n-type emitter region 3 to have, for example, a concentration of approximately 1×10¹⁸ to 1×10²⁰ cm⁻³ and a diffusion depth from the first main surface less than or equal to the depth of n-type emitter region 3.

Gate electrode 5 a is formed on the first main surface with a gate insulating film 4 interposed therebetween so as to face p-type body region 2 interposed between n⁻ drift layer 1 and n-type emitter region 3.

These n⁻ drift layer 1, n-type emitter region 3 and gate electrode 5 a together form an insulated gate type field effect transistor portion (herein referred to as a MOS transistor portion) in which n⁻ drift layer 1 is used as a drain, n-type emitter region 3 is used as a source, and a portion of p-type body region 2 facing gate electrode 5 a across gate insulating film 4 is used as a channel.

On the first main surface interposed between two MOS transistor portions, emitter conductive layer 5 b achieving an emitter potential is formed. The material employed for emitter conductive layer 5 b and gate electrode 5 a includes, for example, polycrystalline silicon to which phosphorus is introduced in high concentration, high melting point metal material, high melting point metal silicide, or a composite film thereof.

Insulating film 9 is formed on the first main surface. Insulating film 9 has a contact hole 9 a formed therein, which extends to a part of the first main surface. Barrier metal layer 10 is formed on the bottom of contact hole 9 a. Emitter electrode 11 applying an emitter potential E is electrically connected to emitter conductive layer 5 b, p⁺ impurity diffusion region 6 and n-type emitter region 3 through barrier metal layer 10.

Furthermore, n-type buffer region 7 and p-type collector region 8 are formed in this order on the second main surface side of n⁻ drift layer 1. Collector electrode 12 applying a collector potential C is electrically connected to p-type collector region 8. Collector electrode 12 is made of an aluminum compound.

In the present embodiment, the spike density in the interface between the semiconductor substrate and collector electrode 12 (that is, the interface between p-type collector region 8 and collector electrode 12) is not less than 0 and not more than 3×10⁸ unit/cm².

N-type impurity diffusion region 14 may be added to the configuration in FIG. 75 as shown in FIG. 76, or n-type buffer region 7 may be omitted as shown in FIG. 77. Furthermore, as shown in FIG. 78, n-type impurity diffusion region 14 may be added and n-type buffer region 7 may be omitted.

[Sixth Embodiment]

In the present embodiment, other configuration of the planar gate type IGBT shown in each of FIGS. 75-78 will be described. FIGS. 79-83 each are a schematic cross sectional view showing each type of configuration of the planar gate type IGBT according to the sixth embodiment of the present invention.

Referring to FIG. 79, the planar gate type IGBT is formed in the semiconductor substrate having a thickness of, for example, about 50 μm to 800 μm. P-type body region 2 made of a p-type semiconductor is selectively formed on the first main surface of n⁻ drift layer 1 on the left side in the figure. For example, p-type body region 2 has a concentration of 1×10¹⁵ to 1×10¹⁸ cm⁻³ and a diffusion depth of about 1.0-4.0 μm from the first main surface. N-type emitter region 3 made of an n-type semiconductor is formed on the first main surface in p-type body region 2, for example, so as to have a concentration of 1×10¹⁸ to 1×10²⁰ cm⁻³ or more and a diffusion depth of about 0.3-2.0 μm from the first main surface. P⁺ impurity diffusion region 6 for providing low resistance contact with p-type body region 2 is formed to the left of n-type emitter region 3 in the figure so as to be spaced apart from n-type emitter region 3. For example, p⁺ impurity diffusion region 6 is formed, for example, so as to have a concentration of about 1×10¹⁸ to 1×10²⁰ cm⁻³ and a diffusion depth from the first main surface less than or equal to the depth of n-type emitter region 3.

Gate electrode 5 a is formed on the first main surface with gate insulating film 4 interposed therebetween so as to face p-type body region 2 interposed between n⁻ drift layer 1 and n-type emitter region 3. Gate electrode 5 a extends to the right end in the figure and faces n⁻ drift layer 1 across gate insulating film 4 on the right side in the figure.

These n⁻ drift layer 1, n-type emitter region 3 and gate electrode 5 a together form an insulated gate type field effect transistor portion (herein referred to as a MOS transistor) in which n⁻ drift layer 1 is used as a drain, n-type emitter region 3 is used as a source, and a portion of p-type body region 2 facing gate electrode 5 a across gate insulating film 4 is used as a channel.

Insulating film 9 and emitter electrode 11 are formed on the first main surface. Insulating film 9 covers n-type emitter region 3 and p-type body region 2 on the first main surface, and gate electrode 5 a. Emitter electrode 11 covers p⁺ impurity diffusion region 6 and insulating film 9, and applies emitter potential E to p⁺ impurity diffusion region 6 and n-type emitter region 3.

Furthermore, n-type buffer region 7 and p-type collector region 8 are formed in this order on the second main surface side of n⁻ drift layer 1. Collector electrode 12 applying collector potential C is electrically connected to p-type collector region 8.

In the present embodiment, the spike density in the interface between the semiconductor substrate and collector electrode 12 (that is, the interface between p-type collector region 8 and collector electrode 12) is not less than 0 and not more than 3×10⁸ unit/cm².

The configuration shown in FIG. 80 is different from the configuration in FIG. 79 in that p-type body region 2 is formed more deeply in the region (more closely to the second main surface) where insulating film 9 is not formed as seen in plan view. Such a p-type body region 2 is formed by adding the process of implanting p-type impurities into the first main surface using insulating film 9 as a mask.

The configuration shown in FIG. 81 is different from the configuration in FIG. 79 in that an n-type impurity diffusion region 14 a is formed within n⁻ drift layer 1 so as to be adjacent to the side surface of p-type body region 2.

The configuration shown in FIG. 82 is different from the configuration in FIG. 81 in that p-type body region 2 is formed more deeply in the region (more closely to the second main surface) where insulating film 9 is not formed as seen in plan view.

The configuration shown in FIG. 83 is different from the configuration in FIG. 81 in that n-type impurity diffusion region 14 a is further formed within n⁻ drift layer 1 so as to be adjacent to the bottom of p-type body region 2.

N-type impurity diffusion region 14 a is formed adjacent to p-type body region 2 as shown in FIGS. 81-83, which causes an increase in the carrier concentration on the emitter side (first main surface side) in the case where the IGBT is in the ON state, as shown in FIG. 84. Consequently, the characteristics of the IGBT can be improved. FIG. 85 is a diagram showing each relation between V_(CE) and J_(C) when an n-type impurity diffusion region is formed and not formed. Referring to FIG. 85, an emitter-collector voltage V_(CE) with respect to current density J_(C) is decreased in the case where n-type impurity diffusion region 14 a is formed.

FIG. 86 is a diagram showing the relation of S_(N14a)/S_(N−) to V_(CE)(sat), J_(C,Break) and V_(G,Break) according to the sixth embodiment of the present invention. In this case, S_(N14a)/S_(N−) represents a ratio of the number of atoms per unit area of the impurities forming n-type impurity diffusion region 14 a (atom/cm²) S_(N14a) to the number of atoms per unit area of the impurities forming n⁻ drift layer 1 (atom/cm²) S_(N−). J_(C,Break) represents a current density that allows interruption of the device in the RBSOA (Reverse Bias Safety Operation Area) mode, and V_(G,Break) represents a gate voltage that allows interruption of the device in the SCSOA (Short Circuit Safe Operation Area) mode. Referring to FIG. 86, under the condition of 0<S_(N14a)/S_(N−)≦20, high interruption performance can be achieved and a reduced collector-emitter voltage V_(CE)(sat) can also be achieved. Therefore, it is preferable that n-type impurity diffusion region 14 a satisfies the condition of 0<S_(N14a)/S_(N−)≦20 in order to decrease the ON voltage while ensuring RBSOA and SCSOA.

[Seventh Embodiment]

FIG. 87 is a plan view showing the layout of the semiconductor device according to the seventh embodiment of the present invention. FIG. 88 is a cross sectional view along a line LXXXVIII-LXVIII in FIG. 87. FIG. 89 is a cross sectional view along a line LXXXIX-LXXXIX in FIG. 87. FIG. 90 shows an impurity concentration distribution along a line XC-XC in FIG. 88. The section marked with diagonal lines in FIG. 87 is a region where a p-type impurity diffusion region 41 is formed. Although only gate groove 1 a (represented by dotted lines in the figure) formed along one gate electrode wiring 11 a is shown in FIG. 87, a plurality of gate grooves 1 a (or emitter grooves 1 b) are actually formed along each gate electrode wiring 11 a. Referring to FIGS. 87-90, the configuration of the IGBT according to the present embodiment will then be described.

Particularly referring to FIG. 87, emitter electrodes 11 and gate electrode wirings 11 a are alternately arranged in the lateral direction in the figure and extend in the vertical direction in the figure. A gate pad 28 for electrically connecting to other wiring is provided in the lower end of gate electrode wiring 11 a located in the center portion of the chip in the figure. Furthermore, the plurality of gate grooves 1 a are arranged directly below gate electrode wiring 11 a in the vertical direction in the figure and along the direction in which gate electrode wiring 11 a extends. The plurality of gate grooves 1 a each having a rectangular shape in plan view are arranged along the direction in which the short side of the rectangle extends (the vertical direction in the figure). P-type body region 2 and n-type impurity diffusion region 14 are formed between gate grooves 1 a which are adjacent to each other in the vertical direction in the figure. Furthermore, p-type impurity diffusion region 41 (a well layer) is formed between emitter electrodes 11 which are adjacent to each other in the lateral direction in the figure (that is, at the end of gate groove 1 a). P-type impurity diffusion region 41 extends directly below gate electrode wiring 11 a along emitter electrode 11 in the vertical direction in the figure.

Particularly referring to FIG. 88, n-type impurity diffusion region 14 is formed between p-type body region 2 and n⁻ drift layer 1. N-type impurity diffusion region 14 is higher in impurity concentration than n⁻ drift layer 1, as shown in FIG. 90. When n-type impurity diffusion region 14 exists, at least one of gate groove 1 a and emitter groove 1 b (for example, FIG. 40) is protruded toward the second main surface with respect to the position where the impurity concentration in n-type impurity diffusion region 14 reaches 1×10¹⁶ cm⁻³, which allows a high withstand voltage (BV_(CES)) to be maintained. The configuration shown in FIG. 88 is substantially the same as that of structure D shown in FIG. 39.

Particularly referring to FIG. 89, gate electrode 5 a filling gate groove 1 a extends also on the first main surface located outside gate groove 1 a, and is electrically connected at its extended portion to gate electrode wiring 11 a. Barrier metal layer 10 is located below gate electrode wiring 11 a, and silicide layer 21 a is formed in the region where barrier metal layer 10 and gate electrode 5 a are in contact with each other. A passivation film 15 is formed on gate electrode wiring 11 a and emitter electrode 11. P-type impurity diffusion region 41 extends deeper than gate groove 1 a (toward the second main surface).

Although every groove shown in FIG. 87 corresponds to gate groove 1 a filled with gate electrode 5 a, at least one of the grooves only needs to serve as a gate groove and other grooves may serve as emitter grooves.

Referring to FIG. 88, the pitch between gate groove 1 a and another groove adjacent thereto (gate groove 1 a on the right side in the figure) is defined as a pitch X. Furthermore, the depth from the first main surface of the semiconductor substrate to the bottom of gate groove 1 a forming a gate trench is defined as a depth Y. The protrusion amount of gate groove 1 a from the junction plane between p-type body region 2 and n-type impurity diffusion region 14 (the junction plane between p-type body region 2 and n⁻ drift layer 1 when n-type impurity diffusion region 14 is not formed) is defined as a protrusion amount D_(T). Further referring to FIG. 89, the distance (depth) from the junction plane between p-type impurity diffusion region 41 and n⁻ drift layer 1 to the bottom of gate groove 1 a is defined as a depth D_(T,Pwell).

The inventor of the present application found that the withstand voltage (breakdown voltage) of the IGBT can be improved by designing the gate trench in the IGBT having a trench-type gate structure under the following conditions.

FIG. 91 is a diagram showing the relation between Y/X and BV_(CES) according to the seventh embodiment of the present invention. Referring to FIG. 91, when depth Y from the first main surface of the semiconductor substrate to the bottom of gate groove 1 a forming a gate trench is greater than the pitch between gate groove 1 a and another groove adjacent thereto (that is, under the condition of 1.0≦Y/X), a high breakdown voltage BV_(CES) is achieved.

FIG. 92 is a diagram showing the relation between D_(T) and BV_(CES) and the relation between D_(T) and E_(P/CS) or E_(P/N−), according to the seventh embodiment of the present invention. In this case, E_(P/CS) represents an electric field intensity in the junction plane between p-type body region 2 and n-type impurity diffusion region 14. E_(P/N−) represents an electric field intensity in the junction plane between p-type body region 2 and n⁻ drift layer 1 in the case where n-type impurity diffusion region 14 is not formed. Referring to FIG. 92, in the case where protrusion amount D_(T) of gate groove 1 a from the junction plane between p-type body region 2 and n-type impurity diffusion region 14 is 1.0 μm D_(T), electric field intensity E_(P/CS) or E_(P/N−) is decreased and breakdown voltage BV_(CES) is increased.

FIG. 93 is a diagram showing the relation of C_(T,Pwell) to BV_(CES) and ΔBV_(CES) according to the seventh embodiment of the present invention. In this case, ΔBV_(CES) represents a value obtained by subtracting BV_(CES) in the case where the gate potential is set at −20V from BV_(CES) in the case where the gate potential is set at 0V (equal to the emitter potential). Referring to FIG. 93, when depth D_(T,Pwell) from the bottom surface of gate groove 1 a to the bottom surface of p-type impurity diffusion region 41 (junction plane between p-type impurity diffusion region 41 and n⁻ drift layer 1) is D_(T,Pwell)≦1.0 μm, breakdown voltage BV_(CES) is increased and breakdown voltage variation amount ΔBV_(CES) is also suppressed low.

As described above, the withstand voltage of the IGBT can be improved by manufacturing gate groove 1 a and emitter groove 1 b so as to satisfy the condition of 1.0≦Y/X, 1.0 μm≦D_(T) or 0<D_(T,Pwell)≦1.0 μm.

Although the configuration in which n-type impurity diffusion region 14 is formed entirely between gate grooves 1 a has been described in FIG. 88, n-type impurity diffusion region 14 may be formed only in a portion between a plurality of grooves, as shown in FIGS. 95 and 96 set forth below.

FIGS. 94 and 95 each are a schematic cross sectional view showing each type of configuration of the trench gate type IGBT according to the seventh embodiment of the present invention. In the configuration shown in FIG. 94, n-type impurity diffusion region 14 is formed only around the gate trench. N-type impurity diffusion region 14 is formed so as to be brought into contact with gate groove 1 a but not with emitter groove 1 b. In contrast, in the configuration shown in FIG. 95, n-type impurity diffusion region 14 is formed only around the emitter trench. N-type impurity diffusion region 14 is formed so as to be brought into contact with each of two emitter grooves 1 b but not with gate groove 1 a.

It is to be noted that since the configurations other than those described above are almost the same as the configuration of structure E shown in FIG. 40, the same components are designated by the same reference characters, and description thereof will not be repeated.

The inventor of the present application found that the collector-emitter voltage can be decreased and the breakdown energy can be improved by adjusting the width of n-type impurity diffusion region 14 and the distance from emitter groove 1 b.

FIG. 96 is a diagram showing the relations of W_(CS) and X_(CS) to V_(CE) and E_(SC). In this case, W_(CS) represents a width of n-type impurity diffusion region 14 in the region existing around emitter groove 1 b as see in plan view, and X_(CS) represents a distance from emitter groove 1 b to the end of n-type impurity diffusion region 14. Referring to FIG. 96, when width W_(CS) of n-type impurity diffusion region 14 is 6 μm≦W_(CS)≦9 μm, or when distance X_(CS) from emitter groove 1 b to the end of n-type impurity diffusion region 14 is 0.5 μm≦X_(CS)≦2 μm, collector-emitter voltage V_(CE) is decreased and a breakdown energy E_(SC) obtained during high short circuit is achieved.

FIG. 97 is a diagram showing the planar layout of n-type emitter region 3 and p⁺ impurity diffusion region 6 in the semiconductor device according to the seventh embodiment of the present invention. Referring to FIG. 97, gate electrode 5 a and emitter conductive layer 5 b each extend in the vertical direction in the figure, and n-type emitter region 3 is formed between gate electrode 5 a and emitter conductive layer 5 b, and between emitter conductive layers 5 b. N-type emitter region 3 extends in the vertical direction in the figure, and p⁺ impurity diffusion regions 6 are formed at regular intervals in the region interposed between n-type emitter regions 3. Furthermore, as shown in FIG. 98, n-type emitter region 3 and p⁺ impurity diffusion region 6 may be alternately formed in the direction in which gate electrode 5 a or emitter conductive layer 5 b extends (in the vertical direction in the figure).

As shown in FIGS. 97 and 98, the width of n-type emitter region 3 along the direction in which gate electrode 5 a extends is defined as W_(SO), and the width of p⁺ impurity diffusion region 6 along the direction in which gate electrode 5 a extends is defined as W_(PC). The inventor of the present application found that the collector-emitter voltage can be decreased and the breakdown energy can be improved by controlling the relation between W_(SO) and W_(PC).

FIG. 99 is a diagram showing the relation of α to V_(CE)(sat) and E_(SC) according to the seventh embodiment of the present invention. In this case, α (%) represents a value defined by the expression α=(W_(SO)/W_(SO)+W_(PC))×100. Referring to FIG. 99, when α is in the range of 8.0%≦α≦20.0%, a low collector-emitter voltage V_(CE)(sat) and a high breakdown energy E_(SC) are achieved.

[Eighth Embodiment]

FIG. 100 is a diagram schematically showing the planar layout of the gate pad according to the eighth embodiment of the present invention. Referring to FIG. 100, in the present embodiment, a part of the current path of gate electrode wiring 11 a (FIG. 87) is formed by a resistor body 28 a having a locally high resistance. In FIG. 100, a part of gate pad 28 for electrically connecting the wiring (surface gate wiring) and gate electrode wiring 11 a is formed by resistor bodies 28 a. Each of resistor bodies 28 a protrudes through the opening provided in the center portion of gate pad 28 so as to face each other. Resistor body 28 a may have the same structure as that of gate electrode 5 a, for example, shown in FIG. 1 or 75.

FIGS. 101 and 102 each are a diagram for illustrating the oscillation phenomenon of the gate voltage. According to the MOS transistor and the IGBT having a trench gate structure, an increase in the switching speed causes collector-emitter voltage V_(CE) to oscillate during fluctuation of a current I_(C) as shown in FIG. 101. This is caused by the fact that an LCR circuit constant causing oscillation of the device is attained. Accordingly, resistor body 28 a is disposed to achieve an LCR circuit constant which hardly causes oscillation of the device. Consequently, the oscillation phenomenon of a gate voltage V_(ge) can be suppressed as shown in FIG. 102.

[Ninth Embodiment]

In order to improve the V_(CE)(sat)-E_(OFF) characteristics in the IGBT, it is effective to reduce a thickness of n drift layer 1. However, a reduction in thickness of n⁻ drift layer 1 makes it difficult to implement a high withstand voltage. Thus, the inventor of the present application pays attention to the relation between electric field intensity E_(P/CS) in the junction plane between p-type body region 2 and n-type impurity diffusion region 14 (electric field intensity E_(P/N−) in the junction plane between p-type body region 2 and n⁻ drift layer 1 when n-type impurity diffusion region 14 is not formed) and electric field intensity E_(N/N−) in the junction plane between n-type buffer region 7 and n⁻ drift layer 1, to thereby find out that the withstand voltage of the IGBT can be improved.

FIG. 103 is a diagram schematically showing the electric field intensity distribution along a line XIX-XIX in FIG. 1 when applying a reverse bias slightly lower than the breakdown voltage to the main junction in the IGBT, according to the ninth embodiment of the present invention. FIG. 104 is a diagram showing the relation between the electric field intensity and the breakdown voltage in the junction plane according to the ninth embodiment of the present invention.

Referring to FIG. 103, the electric field in the semiconductor obtained when applying a reverse bias slightly lower than the breakdown voltage to the main junction of the IGBT is rapidly increased in the region from the first main surface of the semiconductor substrate to the junction plane between p-type body region 2 and n⁻ drift layer 1, and then, gradually decreased within n⁻ drift layer 1, which is followed by a rapid decrease in n⁻ drift layer 1 and n-type buffer region 7. Furthermore, the electric field reaches 0 in p-type body region 2 and n-type buffer region 7. Referring to FIG. 104, a high breakdown voltage BV_(CES) is achieved when electric field intensity E_(P/N−) in the junction plane between n⁻ drift layer 1 and p-type body region 2 is 0<E_(P/N−)≦3.0×10¹⁵ (V/cm). Furthermore, a high breakdown voltage BV_(CES) is achieved when electric field intensity E_(N/N−) in the junction plane between n-type buffer region 7 and n⁻ drift layer 1 is 2.0×10¹⁴≦E_(N/N−) (V/cm). It is preferable that E_(N/N−) is not more than E_(P/N−).

It is to be noted that the structure or the value range described in each of the first to eighth embodiments can be combined with each other as appropriate.

It should be understood that the embodiments disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications and alterations within the scope and meaning equivalent to the terms of the claims.

Industrial Applicability

The present invention is suitable as a high withstand voltage semiconductor device suitable for parallel operation, and particularly as a semiconductor device having an IGBT. 

The invention claimed is:
 1. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; and an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel, wherein said second main surface has a center line average roughness of greater than 0 and not more than 200 nm.
 2. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; and an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel, wherein said second main surface has a maximum height of greater than 0 and not more than 2000 nm.
 3. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; and an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel, wherein a gate groove is formed in said first main surface of said semiconductor substrate, and said gate groove is filled with said gate electrode, a plurality of grooves are formed in said first main surface of said semiconductor substrate and said gate groove is at least one of said plurality of grooves, and a ratio of a depth from said first main surface to a bottom of said gate groove to a pitch between said gate groove and another groove adjacent thereto is not less than 1.0.
 4. A semiconductor device, comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; and an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel, wherein a gate groove is formed in said first main surface of said semiconductor substrate, and said gate groove is filled with said gate electrode, a plurality of grooves are formed in said first main surface of said semiconductor substrate and said gate groove is at least one of said plurality of grooves, a ratio of a depth from said first main surface to a bottom of said gate groove to a pitch between said gate groove and another groove adjacent thereto is not less than 1.0, a plurality of grooves are formed in said first main surface of said semiconductor substrate, said plurality of grooves are arranged in one direction as seen in plan view, and said gate groove is at least one of said plurality of grooves, said semiconductor device further comprises a well layer of a first conductivity type formed on said first main surface adjacent to each of said plurality of grooves, extending in said one direction as seen in plan view and formed deeper than each of said plurality of grooves, and a depth from a bottom surface of said gate groove to a bottom of said well layer is greater than 0 and not more than 1.0 μm.
 5. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel; a collector region formed on said second main surface; said collector region including a collector diffusion layer of a first conductivity type in contact with said second electrode, a buffer diffusion layer of a second conductivity type formed closer to the first main surface than said collector diffusion layer is, and a drift diffusion layer of the second conductivity type, and said drift diffusion layer being lower in impurity concentration than said buffer diffusion layer and formed adjacent to said buffer diffusion layer and closer to the first main surface than said buffer diffusion layer is; a body diffusion layer of the first conductivity type serving as said channel; and a buried diffusion layer of the second conductivity type formed between said body diffusion layer and said drift diffusion layer.
 6. The semiconductor device according to claim 5, wherein a groove is formed in said first main surface of said semiconductor substrate, and said groove protrudes toward the second main surface with respect to a position where the impurity concentration in said buried diffusion layer is 1×10¹⁶cm⁻³.
 7. The semiconductor device according to claim 5, wherein a gate groove and an emitter groove are formed in said first main surface of said semiconductor substrate, said gate groove is filled with said gate electrode, and said emitter groove is filled with a conductive layer having an emitter potential, and said buried diffusion layer is formed so as to be brought into contact with said emitter groove but not with the gate groove.
 8. The semiconductor device according to claim 7, wherein said buried diffusion layer has a width of not less than 6.0 μm and not more than 9 μm as seen in plan view in a region existing around said emitter groove.
 9. The semiconductor device according to claim 7, wherein a distance from said emitter groove to an end of said buried diffusion layer is not less than 0.5 μm and not more than 2 μm.
 10. The semiconductor device according to claim 5, wherein a gate groove and an emitter groove are formed in said first main surface of said semiconductor substrate, said gate groove is filled with said gate electrode, and said emitter groove is filled with a conductive layer having an emitter potential, and said buried diffusion layer is formed so as to be brought into contact with said gate groove but not with the emitter groove.
 11. The semiconductor device according to claim 5, wherein a plurality of grooves are formed in said first main surface of said semiconductor substrate, and said plurality of grooves are arranged in one direction as seen in plan view, and said buried diffusion layer is formed only in a region interposed between said grooves as seen in plan view.
 12. The semiconductor device according to claim 11, further comprising a well layer of the first conductivity type formed on said first main surface adjacent to said plurality of grooves in a direction in which said plurality of grooves are arranged, extending in said one direction as seen in plan view and formed deeper than each of said plurality of grooves, wherein said well layer is formed deeper than said buried diffusion layer.
 13. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel; a first emitter diffusion layer of a first conductivity type formed on said first main surface and in contact with said first electrode; and a second emitter diffusion layer of a second conductivity type formed on said first main surface and in contact with said first electrode and said first emitter diffusion layer, wherein a ratio of a width of said second emitter diffusion layer along a direction in which said gate electrode extends to a sum of said width of the first emitter diffusion layer and a width of the second emitter diffusion layer along the direction in which said gate electrode extends is not less than 0.08 and not more than 0.20.
 14. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; and an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel, wherein an electric signal is transmitted to said gate electrode through a resistor body having a locally high electrical resistance value.
 15. The semiconductor device according to claim 14, wherein said resistor body is identical in structure to said gate electrode.
 16. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel; a collector region formed on said second main surface; and a body diffusion layer of a first conductivity type being in contact with said collector region and serving as said channel, wherein said collector region includes a drift diffusion layer of a second conductivity type, and an electric field intensity in a junction plane between said drift diffusion layer and said body diffusion layer obtained when a reverse voltage is applied to said element is greater than 0 and not more than 3.0×10⁵ V/cm.
 17. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel; a collector region formed on said second main surface; and a body diffusion layer of a first conductivity type being in contact with said collector region and serving as said channel, wherein said collector region includes a collector diffusion layer of the first conductivity type in contact with said second electrode, a buffer diffusion layer of a second conductivity type formed closer to the first main surface than said collector diffusion layer is, and a drift diffusion layer of the second conductivity type, and said drift diffusion layer is lower in impurity concentration than said buffer diffusion layer and formed adjacent to said buffer diffusion layer and closer to the first main surface than said buffer diffusion layer is, and an electric field intensity in a junction plane between said buffer diffusion layer and said drift diffusion layer obtained when a reverse voltage is applied to said element is not less than 2.0×10⁴ V/cm and not more than an electric field intensity in a junction plane between said drift diffusion layer and said body diffusion layer.
 18. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface, facing each other; an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel; and a body diffusion layer of a first conductivity type serving as said channel, wherein a gate groove is formed in said first main surface of said semiconductor substrate, and said gate groove is filled with said gate electrode, and a protrusion amount of said gate groove from a bottom of said body diffusion layer is not less than 1.0 μm and not more than a depth reaching said second main surface.
 19. A semiconductor device comprising: a semiconductor substrate having a first main surface and a second main surface facing each other; an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel; a body diffusion layer of a first conductivity type serving as said channel; and a buried diffusion layer of a second conductivity type formed adjacent to a side surface of said body diffusion layer as seen in plan view; and the semiconductor device is an IGBT of planar gate type.
 20. The semiconductor device according to claim 19, further comprising a collector region formed on said second main surface, wherein said collector region includes a drift diffusion layer of the first conductivity type adjacent to said buried diffusion layer and said body diffusion layer, and a ratio of the number of atoms per unit area of impurities forming said buried diffusion layer to the number of atoms per unit area of impurities forming said drift diffusion layer is not less than 0 and not more than
 20. 